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gain
Istop lowest line current for maximum - 57 - mA
gain
1999 Apr 08 27
Philips Semiconductors Product specification
Speech and handsfree IC with auxiliary
TEA1099H
inputs/outputs and analog multiplexer
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Logic inputs (pins HFC, AUXC, MUTT and MUTR)
VIL LOW-level input voltage -0.4 - 0.3 V
VIH HIGH-level input voltage 1.8 - VBB + 0.4 V
I input current VBB =3V
for pins HFC and AUXC - 36A
for pins MUTT and MUTR - -2.5 -6 A
Handsfree
HF MICROPHONE AMPLIFIER (PINS TXIN, TXOUT AND GATX); note 1
Gv(TXIN-TXOUT) voltage gain from pin TXIN to VTXIN = 8 mV (RMS); 12.7 15.2 17.7 dB
TXOUT RGATX = 30.1 k&!
"Gv voltage gain adjustment with -15 - +16 dB
RGATX
"Gv(f) gain variation with frequency f = 300 to 3400 Hz - 0.1 - dB
referenced to 1 kHz
"Gv(T) gain variation with temperature Tamb = -25 to +75 C - 0.15 - dB
referenced to 25 C
Vno(TXOUT)(rms) noise output voltage at pin psophometrically - -101 - dBmp
TXOUT; pin TXIN is shorted weighted (p53 curve)
through 200 &! in series with
10 F to GNDTX (RMS value)
"Gv(mute) gain reduction if not activated HFC = HIGH; 60 80 - dB
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND VOL); note 1
Gv(HFRX-LSAO) voltage gain from pin HFRX to VHFRX = 20 mV (RMS); 25.5 28 30.5 dB
LSAO RGALS = 255 k&!
"Gv voltage gain adjustment with -28 - +7 dB
RGALS
"Gv(f) gain variation with frequency f = 300 to 3400 Hz - 0.3 - dB
referenced to 1 kHz
"Gv(T) gain variation with temperature Tamb = -25 to +75 C - 0.3 - dB
referenced to 25 C
"Gv(vol) voltage gain variation related to when total attenuation - -3 - dB
"RVOL = 1.9 k&! does not exceed the
switching range
VHFRX(rms)(max) maximum input voltage at pin Iline =70mA - 580 - mV
HFRX (RMS value) RGALS =33k&!; for 2%
THD in the input stage
Vno(LSAO)(rms) noise output voltage at pin LSAO; psophometrically - -79 - dBVp
pin HFRX is open circuit weighted (p53 curve)
(RMS value)
1999 Apr 08 28
Philips Semiconductors Product specification
Speech and handsfree IC with auxiliary
TEA1099H
inputs/outputs and analog multiplexer
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VLSAO(rms) output voltage (RMS value) IBB = 0 mA; IDD =1mA
without external supply on pin ESI
Iline =18mA - 0.9 - V
Iline =30mA - 1.3 - V
Iline >50mA - 1.6 - V
ILSAO(max) maximum output current at pin 150 300 - mA
LSAO (peak value)
"Gv(mute) gain reduction if not activated HFC = HIGH; 60 80 - dB
MUTT = HIGH;
MUTR = HIGH;
AUXC = HIGH
DYNAMIC LIMITER (PINS LSAO AND DLC)
tatt attack time when VHFRX jumps from - - 5ms
20 mV to 20 mV + 10 dB
when VBB jumps below - 1 - ms
VBB(th)
trel release time when VHFRX jumps from - 100 - ms
20 mV + 10 dB to 20 mV
THD total harmonic distortion at t >tatt - 0.1 2 %
VHFRX = 20 mV + 10 dB
VBB(th) VBB limiter threshold - 2.7 - V
MUTE LOUDSPEAKER (PIN DLC)
VDLC(th) threshold voltage required on pin -0.4 - +0.2 V
DLC to obtain mute receive
condition
IDLC(th) threshold current sourced by pin VDLC = 0.2 V - 100 -A
DLC in mute receive condition
"Gvrx(mute) voltage gain reduction in mute VDLC = 0.2 V 60 80 - dB
receive condition
RX AMPLIFIER USING HFRX (PINS HFRX AND AUXO); note 1
Gv(HFRX-AUXO) voltage gain from pin HFRX to VHFRX = 0.25 V (RMS) 1.2 3.7 6.2 dB
AUXO
"Gv(f) gain variation with frequency f = 300 to 3400 Hz - 0.1 - dB
referenced to 1 kHz
"Gv(T) gain variation with temperature Tamb = -25 to +75 C - 0.4 - dB
referenced to 25 C
VHFRX(rms) maximum input voltage at pin Iline = 70 mA; for 2% THD - 580 - mV
HFRX (RMS value) in the input stage
Vno(AUXO)(rms) noise output voltage at pin AUXO; psophometrically - -100 - dBVp
pin HFRX is an open-circuit weighted (p53 curve)
(RMS value)
"Gv(mute) gain reduction if not activated HFC = LOW; 60 80 - dB
MUTT = LOW;
MUTR = HIGH;
AUXC = LOW
1999 Apr 08 29
Philips Semiconductors Product specification
Speech and handsfree IC with auxiliary
TEA1099H
inputs/outputs and analog multiplexer
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI)
Preamplifiers
Gv(TSEN) voltage gain from pin TXIN to - 40 - dB
TSEN
Gv(RSEN) voltage gain from pin HFRX to - 0 - dB
RSEN
Logarithmic compressor and sensitivity adjustment
"Vdet(TSEN) sensitivity detection on pin TSEN; ITSEN = 0.8 to 160 A - 18 - mV
voltage change on pin TENV
when doubling the current from
TSEN
"Vdet(RSEN) sensitivity detection on pin RSEN; IRSEN = 0.8 to 160 A - 18 - mV
voltage change on pin RENV
when doubling the current from
RSEN
Signal envelope detectors
Isource(ENV) maximum current sourced from - 120 -A
pin TENV or RENV
Isink(ENV) maximum current sunk by pin -1.25 -1 -0.75 A
TENV or RENV
"VENV voltage difference between pins when 10 A is sourced - 3 - mV
RENV and TENV from both RSEN and
TSEN; signal detectors
tracking; note 2
Noise envelope detectors
Isource(NOI) maximum current sourced from 0.75 1 1.25 A
pin TNOI or RNOI [ Pobierz całość w formacie PDF ]

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